| 发明名称 |
METHOD OF GETTERING SEMICONDUCTOR DEVICES |
| 摘要 |
<p>The invention relates to a process for gettering semiconductor devices. A getter layer of amorphous or microcrystalline silicon is applied to the device. The so coated device is thermally treated and the getter layer is removed.</p> |
| 申请公布号 |
EP0092540(B1) |
申请公布日期 |
1987.11.04 |
| 申请号 |
EP19830890053 |
申请日期 |
1983.04.05 |
| 申请人 |
SHELL AUSTRIA AKTIENGESELLSCHAFT |
发明人 |
SCHLOSSER, VIKTOR, DR. |
| 分类号 |
H01L21/322;H01L31/18;H01L31/20;(IPC1-7):H01L21/322 |
主分类号 |
H01L21/322 |
| 代理机构 |
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| 主权项 |
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| 地址 |
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