发明名称 Lithographic mask structure and lithographic process
摘要 There is disclosed a lithographic mask structure which comprises a masking material support film and an annular support substrate for supporting the masking material support film at the periphery, the masking material support film containing a fluorescent substance. Also disclosed is a lithographic process for exposing a photosensitive material to irradiation with a radiation beam through a masking material support film provided with a masking material pattern-wise.
申请公布号 US4735877(A) 申请公布日期 1988.04.05
申请号 US19860915376 申请日期 1986.10.06
申请人 CANON KABUSHIKI KAISHA 发明人 KATO, HIDEO;IZAWA, YOSHIE;CHIBA, KEIKO
分类号 G03F1/14;G03F1/22;G03F7/20;(IPC1-7):G03F7/10 主分类号 G03F1/14
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