发明名称 |
Lithographic mask structure and lithographic process |
摘要 |
There is disclosed a lithographic mask structure which comprises a masking material support film and an annular support substrate for supporting the masking material support film at the periphery, the masking material support film containing a fluorescent substance. Also disclosed is a lithographic process for exposing a photosensitive material to irradiation with a radiation beam through a masking material support film provided with a masking material pattern-wise.
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申请公布号 |
US4735877(A) |
申请公布日期 |
1988.04.05 |
申请号 |
US19860915376 |
申请日期 |
1986.10.06 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
KATO, HIDEO;IZAWA, YOSHIE;CHIBA, KEIKO |
分类号 |
G03F1/14;G03F1/22;G03F7/20;(IPC1-7):G03F7/10 |
主分类号 |
G03F1/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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