INTEGRATED CIRCUITS WITH MEMORY CELLS AND METHODS OF MANUFACTURING THE SAME

摘要

Integrated circuits and methods for manufacturing the same are provided. An integrated circuit includes a lower electrode overlying a substrate, an insulating layer overlying the lower electrode, and an upper electrode overlying the insulating layer. The lower electrode, the insulating layer, and the upper electrode form a stack having a side surface. A phase change spacer is adjacent to the side surface, where the phase change spacer is electrically connected to the lower electrode and the upper electrode.

主权项

1. An integrated circuit comprising:
a lower electrode overlying a substrate; an insulating layer overlying the lower electrode; an upper electrode overlying the insulating layer, such that the lower electrode, the insulating layer, and the upper electrode comprise a stack having a side surface; a phase change spacer adjacent to the side surface, wherein the phase change spacer is electrically connected to the lower electrode and the phase change spacer is directly connected to the upper electrode; and a heater spacer adjacent to the side surface of the stack, wherein the phase change spacer and the heater spacer are electrically connected, and wherein the heat spacer is directly connected to the lower electrode.