| 摘要 |
The method comprises (a) growing capacitor oxide on the Si substrate to form a polysilicon layer, (b) forming oxide film on the polysilicon layer by the low temperature oxidation, (c) ion-injecting an ion source (phosphorus, argon or arsenic), (d) forming patterns to be etched by photomasking , (e) wet-etching the low temperature oxide film to be sloped using 7:1 Buffered hydrofluoric acid (7:1 is the ratio of H2O2 to hydrofluoric acid), (f) dryetching polysilicon, (g) removing photoresist and forming gate oxide, and (h) gate-etching after depositing polysilicon and silicide.
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