发明名称 |
CIRCUIT SUBSTRATE COMPRISING NITRIDE TYPE CERAMICS, METHOD FOR PREPARING IT, AND METALLIZING COMPOSITION FOR USE IN IT |
摘要 |
Disclosed is: i) a nitride type ceramic substrate comprises; a nitride type ceramic sintered sheet; a conductive metallized layer formed on the nitride type ceramic sintered sheet; and a layer of a compound containing yttria and alumina, present in the vicinity of the interface between the nitride type ceramic sintered sheet and the metallized layer; ii) a circuit substrate comprises; a substrate comprising a nitride type ceramic sintered sheet; a metallized layer comprising molybdenum and tungsten as a main component and an activation metal added thereto formed on the substrate; and a layer of a compound containing yttria and alumina, present inside of the metallized layer and in the vicinity of the interface between the substrate and the metallized layer; iii) a surface conductive ceramic substrate which is characterized by comprising; a nitride type ceramic substrate; and a conductive metallized layer chiefly comprised of at least one of Mo and W, a group IVa active metal element and a fourth period transition metal (except for Ti), formed on the substrate; and iV) a surface conductive ceramic substrate which is characterized by comprising; a nitride type ceramic substrate; an intermediate reactive layer chiefly comprised of a compound containing a grain boundary constituent phase component of the ceramic substrate, and a compound of a group IVa active metal; and a conductive metallized layer chiefly comprised of at least one of molybdenum and tungsten, a nitride of a group IVa active metal and a composite compound comprising an oxide of a group IVa active metal and an oxide of a fourth period transition metal (except for titanium), formed on the substrate with the interposition of the intermediate reactive layer. Disclosed is also a method for preparing these substrates and metallizing composition used therefor. According to this invention, a circuit substrate having a conductive metallized layer formed thereon with a high joint strength can be obtained. |
申请公布号 |
US5063121(A) |
申请公布日期 |
1991.11.05 |
申请号 |
US19890410863 |
申请日期 |
1989.09.22 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SATO, HIDEKI;MIZUNOYA, NOBUYUKI;ASAI, HIRONORI;ANZAI, KAZUO;HATANO, TSUYOSHI |
分类号 |
C04B35/581;C04B41/51;C04B41/52;C04B41/88;C04B41/89;H01L21/48;H01L23/15;H01L23/498;H05K1/09;H05K3/38 |
主分类号 |
C04B35/581 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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