MANUFACTURING METHOD OF BURIED HETEROSTRUCTURE LASER DIODE

摘要

The method comprises the steps of growing an n-InP buffer layer (2), an InGaAsP active layer (3), a P-Inp clad layer (4), a P- InGaAsP cap layer (5) sequentially to form a SiO2 layer (8) thereon at 300 deg.C - 350 deg.C by CVD method, the layer (8) being used as a reverse mesa etching mask, and etching the layers (2,3,4,5,6) at 300 deg.C - 350 deg.C such that the laminated layers (2,3,4,5,6) forms a reverse mesa structure to minimize the formation of undercut. The method can obtain the good adhesive power between the InP substrae and SiO2 layer, and also obtain the constant undercut to improve the mfr. yield.