发明名称 Pulse forming circuit with selected delay before rise.
摘要 <p>The invention relates to a circuit for forming a narrow output pulse (RAI) by charging a first and a second node (1,2) during the relatively long interval between output pulses. When an initiating pulse (RAS) is received, both nodes (1,2) are discharged rapidly. An inverting amplifier (Inv9) which forms the circuit output has its output connected to the second node (2), and it produces the output pulse as the complement of the voltage level at this node. Time delay elements (Inv1-Inv8) establish the width of the output pulse (RAI). Just before the time for the fall of the output pulse (RAI), the first and second nodes (1,2) are isolated and the second node (2) is then charged to a voltage to turn off the inverting amplifier (Inv9) and drop the output pulse. The initiating pulse (RAS) is applied to the discharging circuit through a selected one of two paths that have different delays. The circuit is useful in the support circuits for an FET memory of the type that requires a narrow pulse, Row Address Interlock, following an initiating pulse Row Address Set by a short delay in normal memory operations and by a longer delay in memory refresh operations. &lt;IMAGE&gt;</p>
申请公布号 EP0574606(A1) 申请公布日期 1993.12.22
申请号 EP19920110238 申请日期 1992.06.17
申请人 ETRON TECHNOLOGY INC. 发明人 MAO, ROBERT S.
分类号 H03K5/13;H03K5/00;(IPC1-7):H03K5/13;G11C11/407 主分类号 H03K5/13
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