Method for manufacturing anticorrosive thin film resistor and structure thereof

摘要

Disclosed are a method for manufacturing an anticorrosive thin film resistor and a structure thereof, which includes a thin film resistor and a protection layer formed on the thin film resistor. The method uses one of silicon (Si) or tantalum (Ta) to serve as a film coating target and, during a process of reactive sputtering, mixes reactive oxygen or nitrogen with a discharge gas so as to coat a thin film on the thin film resistor with the operation temperature of the reactive sputtering process controlled between 100° C.-500° C. As such, the film coating target is passivated to form an anticorrosive protection layer having a thickness of at least 1 μm to prevent change of electrical property of the resistor resulting from electrolytic corrosion.

主权项

1. A method for manufacturing an anticorrosive thin film resistor, comprising the following steps:
(a) providing a thin film resistor comprising an aluminum oxide substrate, a first electrode section formed at one side of the aluminum oxide substrate, a second electrode section formed at one side of the aluminum oxide substrate that is distant from the first electrode section, and a resistance layer formed on the aluminum oxide substrate; (b) selecting one of silicon (Si) and tantalum (Ta) to serve as a film coating target; (c) mixing a reactive gas comprising one of oxygen and nitrogen in a discharge gas to conduct a reactive sputtering process with the film coating target; (d) controlling an operation temperature of the reactive sputtering process between 100° C.-500° C.; and (e) passivating the film coating target with the reactive gas so as to form an anticorrosive protection layer comprising a single chemical compound of the reactive gas and the film coating target on the resistance layer of the thin film resistor.