发明名称 PNP punchthrough-assisted protection device for special applications in CMOS technologies
摘要 A protection circuit (40) providing positive and negative stress protection. A lateral PIN (58) assists in the triggering of a silicon-controlled rectifier (60) for positive stress protection. A vertical PNP (62) provides negative stress protection. A Schottky diode 64 may be used for biasing a n-well (44) to prevent latchup.
申请公布号 US5493133(A) 申请公布日期 1996.02.20
申请号 US19950443032 申请日期 1995.05.17
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 DUVVURY, CHARVAKA;CARVAJAL, FERNANDO D.
分类号 H01L27/02;(IPC1-7):H01L29/06;H01L29/861 主分类号 H01L27/02
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