发明名称 |
PNP punchthrough-assisted protection device for special applications in CMOS technologies |
摘要 |
A protection circuit (40) providing positive and negative stress protection. A lateral PIN (58) assists in the triggering of a silicon-controlled rectifier (60) for positive stress protection. A vertical PNP (62) provides negative stress protection. A Schottky diode 64 may be used for biasing a n-well (44) to prevent latchup.
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申请公布号 |
US5493133(A) |
申请公布日期 |
1996.02.20 |
申请号 |
US19950443032 |
申请日期 |
1995.05.17 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
DUVVURY, CHARVAKA;CARVAJAL, FERNANDO D. |
分类号 |
H01L27/02;(IPC1-7):H01L29/06;H01L29/861 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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