发明名称 Method for packaging circuits
摘要 A method for packaging integrated circuit chips (die) is described that includes providing a base substrate with package level contacts, coating a base substrate with adhesive, placing dies on the adhesive, electrically connecting the die to the package level contacts, and removing the backside of the base substrate to expose the backside of the package level contacts. Accordingly, an essentially true chip scale package is formed. Multi-chip modules are formed by filling gaps between the chips with an encapsulant. In an embodiment, chips are interconnected by electrical connections between package level contacts in the base substrate. In an embodiment, substrates each having chips are adhered back-to-back with through vias formed in aligned saw streets to interconnect the back-to-back chip assembly.
申请公布号 US9484225(B2) 申请公布日期 2016.11.01
申请号 US201314053233 申请日期 2013.10.14
申请人 Micron Technology, Inc. 发明人 Poo Chia Y.;Waf Low S.;Jeung Boon S.;Koon Eng M.;Kwang Chua S.
分类号 H05K3/30;H01L21/56;H01L21/683;H01L25/065;H01L25/00;H01L21/66;H01L23/00 主分类号 H05K3/30
代理机构 Schwegman Lundberg & Woessner, P.A. 代理人 Schwegman Lundberg & Woessner, P.A.
主权项 1. A chip-scale-packaging method, comprising: singulating a die from a first wafer; testing the singulated die; forming final I/O locations on a second wafer; applying adhesive to a top surface of the second wafer; placing the singulated die on the adhesive over the final I/O locations; removing a back surface of the second wafer to expose the final I/O locations; andconnecting the singulated die to an electric circuit through the final I/O location, wherein singulating the die from the first wafer includes mechanically cutting saw streets to form a side of the first and second wafers, and wherein singulating the die includes exposing at least one electrical connection along the side of the first and second wafers.
地址 Boise ID US