| 发明名称 |
Method for performing memory access management, and associated memory device and controller thereof |
| 摘要 |
A method for performing memory access includes: performing a plurality of sensing operations respectively corresponding to a plurality of different sensing voltages to generate a first digital value of a Flash cell of a Flash memory and a second digital value of the Flash cell of the Flash memory; using the first digital value and the second digital value to obtain soft information of a bit stored in the Flash cell; and using the soft information to perform soft decoding. |
| 申请公布号 |
US9520185(B2) |
申请公布日期 |
2016.12.13 |
| 申请号 |
US201514956410 |
申请日期 |
2015.12.02 |
| 申请人 |
Silicon Motion Inc. |
发明人 |
Yang Tsung-Chieh;Chang Hsiao-Te;Wang Wen-Long |
| 分类号 |
G11C16/04;G11C11/56;G11C16/26;G06F3/06;G11C16/08 |
主分类号 |
G11C16/04 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A method for performing memory access, comprising:
performing a plurality of sensing operations respectively corresponding to a plurality of different sensing voltages to generate a first digital value of a Flash cell of a Flash memory and a second digital value of the Flash cell of the Flash memory; using the first digital value and the second digital value to obtain soft information of a bit stored in the Flash cell; and using the soft information to perform soft decoding. |
| 地址 |
Hsinchu County TW |
