发明名称 ELECTRODE PATTERN FORMATION AT DEEP GROOVE BOTTOM
摘要 PROBLEM TO BE SOLVED: To form a highly accurate and highly adhesive electrode pattern by forming an electrode metal film on the whole surface of a wafer including a resist pattern at the bottom of a groove of a specific depth or more and lifting off the electrode metal film so as to obtain a desired shape. SOLUTION: Within the bottom face of a groove of a 20μm or more on a wafer 21, the metal film of a sacrifice layer 32 is roughly patterned by lift-off method, and a first resist pattern 34 is formed on the patterned sacrifice layer 32. On the part of the first resist pattern 34, resist with a viscosity lower than that of the first resist 33 is applied and a second resist pattern 36 is formed. Then, the patterned sacrifice layer 32 is removed and an electrode metal film 37 is formed by sputtering. Lastly, the first and second composite resist patterns 34 and 36 are removed by lift-off method so as to pattern the electrode metal film 37 and a desired shape is obtained.
申请公布号 JPH09320981(A) 申请公布日期 1997.12.12
申请号 JP19960137968 申请日期 1996.05.31
申请人 HITACHI LTD;HITACHI CABLE LTD 发明人 AKASHI TERUHISA;OKANO HIROAKI
分类号 H01L21/28;H01L21/027;(IPC1-7):H01L21/28 主分类号 H01L21/28
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