| 摘要 |
PROBLEM TO BE SOLVED: To prevent peeling of an electrode, when an ohmic electrode using Ni is formed through an contact hole formed in an insulating film on a silicon carbide(SiC). SOLUTION: An insulating film 21 consisting of SiO2 is formed on a SiC substrate 20 on which a semiconductor element has been formed. A contact hole 21a is formed in the insulating film 21, and a Ni electrode 22, ohmic electrode contacting a semiconductor element formed on the SiC substrate 20, is formed in the contact hole 21a. This structure of the Ni electrode 22 are formed only in the contact hole 21a and not on the insulating film 21 makes it possible to prevent the Ni electrode 22 from peeling.
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