| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a pattern of a resist film, which prevents the resist film from being damaged by the impact of the sprayed particles of processing liquids during photoresist developing process and photoetching process, preventing occurrence of pattern missing. SOLUTION: In the etching process for manufacture of a photomask, a chromium film 2 is formed on a glass substrate 1, and a resist film 3 having a specified pattern is formed (a). The substrate 1 is mounted on a spinner, and prior to the etching, a pre-wetting solution 4, which is a surfactant, is dripped (b). While the pre-wetting solution is being fed, spraying of the etching solution is started (c). Feeding of the pre-wetting solution is stopped (d), and the etching is continued until the pattern desired is formed (e). |
