| 摘要 |
A ROM device structure, featuring a ROM memory cell, with the ROM memory cell exhibiting a concave shaped, channel region, has been developed. The ROM device structure is comprised of heavily doped, N type, bit line regions, located in flat regions of the ROM device structure, while lightly doped, P type regions. comprise the concave channel region for the ROM memory cell. The ROM device structure offers self-alignment of the P type, concave channel regions, to the heavily doped N type, bit line regions.
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