Edging for MOSFETs, high blocking diodes, high voltage transistors, and IGBTs has a sieve-like field plate provided over the surface on or in an insulating layer

摘要

Edging for a semiconductor device has a sieve-like field plate (5) provided over the surface on or in an insulating layer. Edging for a semiconductor device consists of a semiconductor body of a first conducting type, a zone provided in a surface of the body of second conducting type, and a sieve-like field plate provided over the surface on or in an insulating layer.