发明名称 |
Apparatus for improving the performance of a temperature-sensitive etch process |
摘要 |
The temperature of a dry etch process of a semiconductor substrate in a plasma etch chamber is controlled to maintain selectivity while also providing a high etch rate by introducing one or more cooling steps into the etch process. To maintain selectivity of the etch as well as a high rate of etch, the formation of plasma is terminated prior to exceeding a predetermined maximum temperature at at least one selected location in the chamber. The temperature at the selected location is reduced prior to the resumption of plasma flow and etching. The plasma etch is then continued, and may optionally be terminated again to permit cooling, as needed, until etching has been completed.
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申请公布号 |
US6056850(A) |
申请公布日期 |
2000.05.02 |
申请号 |
US19980005409 |
申请日期 |
1998.01.09 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
BLALOCK, GUY T.;HOWARD, BRADLEY J. |
分类号 |
H01L21/311;(IPC1-7):C23C16/00;H05H1/00 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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地址 |
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