| 摘要 |
PROBLEM TO BE SOLVED: To realize efficient doping and laser activation by doping impurities to a semiconductor area through high-speed ion irradiation and annealing them by irradiating it with a laser or an intense light that is equivalent to the laser. SOLUTION: A semiconductor film is annealed for crystalization and it is patterned to form an insular semiconductor area 103. A silicon oxide film 104 as a gate insulation film is stacked, and a gate electrode 105 is formed of aluminum and it is anode-oxidized to form an anode oxide 106. Then, the gate insulation film is etched by the dry etching method to form a thin insulation film 107, and irradiated with a laser light with a wavelength of 532 nm and a phosphorus is injected to the semiconductor area 103 in a self-aligning way, thereby forming an impurity area 108. Thus, ion implantation or ion doping, and laser annealing or lamp annealing can be conducted efficiently. |
