| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an SOI semiconductor device which does not form a parasitic MOSFET of low threshold voltage, when an electric field concentrates on a part where an gate electrode is close to a boundary between an active region and an element isolation region, in a case where an element isolation region is provided for an SOI substrate through a mesa element isolation region forming method. SOLUTION: An SOI semiconductor device is manufactured through a method where an SOI substrate is prepared, an element isolation region forming mask 15 is formed on a semiconductor layer 12, impurities are introduced into a region of the semiconductor layer 12 which is not covered with the element isolation region forming mask 15, then the introduced impurities are diffused into a part of the semiconductor layer 12 covered with the element isolation region forming mask 15, and then the semiconductor layer 12 is selectively removed by using the mask 15.
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