| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for cleaning the inside of a reaction container that restrains damage to a quartz reaction tube and wafer boat and reduces the running cost, when the inside of a reaction vessel is cleaned after deposition of poly-silicon or titanium nitride using a vertical heat treatment equipment for example. SOLUTION: After depositing a poly-silicon film on a semiconductor wafer, a boat is conveyed into a reaction vessel without wafer and ambient temperature of wafer treatment is set to 700 to 800 deg.C, for example, pressure is set to about 1 to 2 Torr, chlorine gas diluted with nitrogen gas is flowed into the reaction vessel at fixed flow rate to remove poly-silicon film stuck to the reaction tube or the wafer boat. This method can be applied after completion of film formation of titanium nitride(TiN) film is completed, and in this case the cleaning conditions are almost the same as those of poly-silicon cleaning but the temperature inside the reaction vessel can be a little bit lower.
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