发明名称 Method of manufacturing semiconductor device
摘要 In the steps of manufacturing a liquid crystal display, a step of reducing the electrostatic destruction of switching elements is provided. An electrostatic destruction preventing short-circuiting ring is left on an active matrix substrate until the execution of a short-circuiting bar-carrying FPC fixing step is finished. This enables the electrostatic destruction of the switching elements, which occurs due to the operations in a chamfering step to a FPC fixing step, to be reduced.
申请公布号 US2001051385(A1) 申请公布日期 2001.12.13
申请号 US20010875622 申请日期 2001.06.06
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 EGUCHI SHINGO
分类号 G02F1/13;G02F1/1362;H05K1/02;H05K3/36;(IPC1-7):H01L21/00 主分类号 G02F1/13
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