发明名称 |
Method of manufacturing semiconductor device |
摘要 |
In the steps of manufacturing a liquid crystal display, a step of reducing the electrostatic destruction of switching elements is provided. An electrostatic destruction preventing short-circuiting ring is left on an active matrix substrate until the execution of a short-circuiting bar-carrying FPC fixing step is finished. This enables the electrostatic destruction of the switching elements, which occurs due to the operations in a chamfering step to a FPC fixing step, to be reduced.
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申请公布号 |
US2001051385(A1) |
申请公布日期 |
2001.12.13 |
申请号 |
US20010875622 |
申请日期 |
2001.06.06 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
EGUCHI SHINGO |
分类号 |
G02F1/13;G02F1/1362;H05K1/02;H05K3/36;(IPC1-7):H01L21/00 |
主分类号 |
G02F1/13 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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