| 摘要 |
PROBLEM TO BE SOLVED: To obtain insulation between two kinds of electrodes formed in a trench and to solve a problem of an element pressure resistance depending upon a distance from a substrate contact, in a trench lateral MOSFET. SOLUTION: The upper end of a gate electrode 110 is set lower than a substrate surface to obtain a thickness of an interlayer insulating film 118 between the gate electrode 110 and a drain electrode 112 for covering the layers. Further, in a (p) base region on the bottom of a trench, an n+ source region and a p+ contact region are formed, and a source electrode is connected to an n+ source region and p+ contact region respectively via a source connecting conductor and a p+ connecting conductor. Moreover, it is preferable to interpose a SiO2 film between the n+ connecting conductor and a p+ connecting conductor.
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