Spin Transfer MRAM Device with Reduced Coefficient of MTJ Resistance Variation

摘要

We describe the manufacturing process for and structure of a CPP MTJ MRAM unit cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The cell is formed of a vertically or horizontally series connected sequence of N sub-cells, each sub-cell being an identical MTJ element. A statistical population of such multiple sub-cell unit cells has a variation of resistance that is less by a factor of N−1/2 than that of a population of single sub-cells. As a result, such unit cells have an improved read margin while not requiring an increase in the critical switching current.

主权项

1. A spin transfer MRAM unit cell comprising:
a local transistor capable of providing a critical switching current to an MTJ cell element; a horizontally directed word line contacting said transistor and capable of activating said transistor so that a current is produced; a horizontally directed bit line, vertically separated from said word line and directed transversely to said word line; a configuration of N vertically adjacent MTJ sub-cells, wherein N is an integer greater than 1, said configuration including a first sub-cell and a last sub-cell and said configuration being electrically connected in linear series, wherein all MTJ sub-cells have the same multi-layer structure with the same geometry and each sub-cell comprises, in a vertically stacked configuration, a bottom electrode, a pinning layer, a synthetic pinned layer, a tunneling barrier layer, a free layer and an upper electrode and wherein the bottom electrode of said first sub-cell of said N sub-cells electrically contacts said local transistor, and the top electrode of said last sub-cell of said N sub-cells electrically contacts said bit line, and wherein said top electrode and said bottom electrode of each pair of vertically adjacent sub-cells are in electrical contact, whereby a critical current capable of simultaneously switching the magnetization of said free layer in each sub-cell can pass vertically between said transistor and said bit line.