| 摘要 |
PROBLEM TO BE SOLVED: To reduce an internal electric field for improving characteristics of a semiconductor device having a trench gate. SOLUTION: A trench gate type semiconductor device has a first conductivity- type semiconductor SUB where a channel is formed, a trench T that is formed in the first conductivity-type semiconductor, two second conductivity-type semiconductor regions S and D that come into contact with both sides in the direction of the channel and function as a source or a drain, a gate electrode GE where at least one portion is buried in the trench by interposing an insulating film GD, and a channel formation region comprising a bottom surface in the trench and the first conductivity-type semiconductor region section that comes into contact with both the sides in the channel direction. In the channel formation region, there are a high-concentration region HR having the relatively high concentration of impurities, and a low-concentration region having the low concentration of impurities. The high-concentration region HR is formed at a position that is in contact with merely either of the bottom surface or side of the trench T. COPYRIGHT: (C)2003,JPO
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