发明名称 Semiconductor apparatus and protection circuit
摘要 A protection circuit for use in a semiconductor apparatus includes a first conductivity type semiconductor substrate, a second conductivity type first diffusion region formed on the semiconductor substrate, and a second conductivity type second diffusion region formed on the semiconductor substrate. The second diffusion region is distanced at a prescribed interval from the first diffusion region. The first diffusion region is electrically connected to a pad for electrically connecting the semiconductor apparatus to an outside region. The second diffusion region is electrically connected to a power supply voltage. At least a portion of each of the first and second diffusion regions is entirely formed right under a pad area having the pad.
申请公布号 US2003223164(A1) 申请公布日期 2003.12.04
申请号 US20030400410 申请日期 2003.03.28
申请人 EBARA ATSUSHI 发明人 EBARA ATSUSHI
分类号 H01L23/52;H01L21/3205;H01L21/768;H01L21/822;H01L21/8238;H01L27/02;H01L27/04;H01L27/06;H01L27/092;(IPC1-7):H02H9/00 主分类号 H01L23/52
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