| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To overcome the problem that a wiring film is deformed by heating and is approached to or contacted with a semiconductor pellet whereby void is caused in resin adhesive poured between the semiconductor pellet and the wiring film, in a COF (chip on film) semiconductor device employing a thin wiring film. <P>SOLUTION: In the semiconductor device, the semiconductor pellet 12 having a bump electrode 14 is opposed to the wiring film 15 having a conductive pattern 17 formed on an insulating film 16, and then the bump electrode 14 is superposed on the principal part of the conductive pattern 17 to connect them electrically by connecting the semiconductor pellet 12 to the wiring film 15 through the resin adhesive 22. Further, a cavity 20 is formed on a surface of the wiring film 15, which is opposed to the semiconductor pellet 12. <P>COPYRIGHT: (C)2004,JPO</p> |
