POWER SEMICONDUCTOR DEVICE WITH SHALLOW TRENCH AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A power semiconductor device and a method of manufacturing the same are provided to obtain a high breakdown voltage and a low forward voltage drop by using a shallow trench. CONSTITUTION: A power semiconductor device(200) includes a substrate, first and second doped regions, a first source region, a second source region, and a gate. The substrate(202) includes an upper surface(220), a lower surface(221) and a trench(285). The first and second doped regions(286) are formed adjacent to the upper surface of the substrate. The first source region(287) is formed in the first doped region. The second source region is formed in the second doped region. The gate(280) includes a first portion prolonged toward the trench. The depth of the trench is smaller than that of the first doped region.