| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device that has a nonvolatile memory and can improve the production yield, by easily adjusting the writing voltage. <P>SOLUTION: This semiconductor integrated circuit device has a level booster circuit for generating the writing voltage (boosted voltage) to use in the nonvolatile memory, a first comparator for comparing the the actually measured output of the level booster circuit and the expected value provided from the outside, a voltage divider circuit for generating a plurality of correction voltages to control the boosted voltage, a counter for generating counted values for selecting the correction voltage, a timing control circuit for generating the count signals to sequentially change the count values according to the comparison of the actually measured value and the expected value, a memory for storing the counter values, a correction level control circuit for selectively outputting the correction voltage, depending on the count value, a reference voltage source for outputting the reference voltage, a level control circuit for controlling whether to supply the clock to generate the boosted voltage to the level booster circuit, by comparing the selected correction voltage with the reference voltage. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
