| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory and its operating method. <P>SOLUTION: A nonvolatile memory has such a structure that: a memory cell is a single gate; and a transistor and capacity are fitted onto a base of a semiconductor. The transistor contains a first conductive gate laminated on the surface of a dielectric layer, and also an ion doping region with a source and a drain at both sides is formed. A capacity structure contains the ion doping region, the dielectric layer and a second conductive gate laminated on it. Moreover, the conductive gates of the capacity and the transistor are electrically connected, and the single floating gate of the memory cell is formed. In that, the semiconductor base is a p-type or n-type. Moreover, with respect to the single gate memory cell, there are provided operation methods of writing, erasing, reading, or the like of program learning of a reverse bias. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
