| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain crystal which has flat surfaces and less defects, and whose crystal grains are large. <P>SOLUTION: A 1st laser beam, emitted in pulses at a relatively high repetition frequency by a 1st laser oscillator 1, is converged on a substrate 6 by a 1st intermediate optical system 2, to form a 1st beam spot in a slit shape. A 2nd pulse laser beam, which is emitted by a 2nd laser oscillator 3 and rises before and falls, after the 1st laser beam, is converged on the substrate 6 by a 2nd intermediate optical system 4, to form a 2nd beam spot which is similar to the 1st beam spot and includes the 1st beam spot. Then crystallization is carried out, while the substrate 6 or 1st and 2nd beam spots are being moved. The semiconductor thin film on the substrate 6 as a whole is grown in one direction to form a ridge-free crystal surface. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
