发明名称 Reduced power programming of non-volatile cells
摘要 Methods for minimizing current consumption in a memory array during programming of non-volatile memory cells, such as NROM cells, in the array include: programming a cell without having a direct current flowing from a positive supply to ground through the array, programming a plurality of cells with programming pulses without discharging a global bit line carrying a programming voltage between programming pulses, and programming a cell with transient currents.
申请公布号 US7599227(B2) 申请公布日期 2009.10.06
申请号 US20080081282 申请日期 2008.04.14
申请人 SAIFUN SEMICONDUCTORS LTD. 发明人 MAAYAN EDUARDO
分类号 G11C16/04;G11C16/10;G11C16/12;G11C16/24 主分类号 G11C16/04
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