| 摘要 |
PROBLEM TO BE SOLVED: To inhibit a drop or adhesion of a reaction product to a deposition target substrate.SOLUTION: A CVD apparatus 1 comprises: an internal space; a housing chamber 100 for housing a substrate such that a film formation surface faces upward on a lower side (fifth region A5) of the internal space; and a floor part 110 and a ceiling 120 which are provided below and above the internal space, respectively. The ceiling 120 includes a first partition member 171 to a third partition member 173 each extending in a -Z direction and crossing an X direction and attached to the ceiling 120, for partitioning an upper side of the internal space into a first region A1 to a fourth region A4. Each of a first partition height Hp1 to a third partition height Hp3 which are lengths of the first partition members 171 to the third partition members 173 in a Z direction is set at a height more than half of an interior height Hr of the internal space from the floor part 110 to the ceiling 120 (Hp1≥Hr/2, Hp2≥Hr/2, Hp3≥Hr/2). |
