发明名称 Plasma processing apparatus and plasma processing method
摘要 A plasma processing apparatus is provided. According to the apparatus, a main antenna connected to a high frequency power source and an auxiliary antenna electrically insulated from main antenna is arranged. Moreover, projection areas when the main antenna and the auxiliary antenna are seen in a plan view are arranged so as not to overlap with each other. More specifically, the auxiliary antenna is arranged on a downstream side in a rotational direction of the turntable relative to the main antenna. Then, a first electromagnetic field is generated in the auxiliary antenna by way of an induction current flowing through the main antenna, and a second induction plasma is generated even in an area under the auxiliary antenna in addition to an area under the main antenna by resonating the auxiliary antenna.
申请公布号 US9502215(B2) 申请公布日期 2016.11.22
申请号 US201414538981 申请日期 2014.11.12
申请人 Tokyo Electron Limited 发明人 Kato Hitoshi;Miura Shigehiro;Koshimizu Chishio;Yamawaku Jun;Yamazawa Yohei
分类号 H01J37/32 主分类号 H01J37/32
代理机构 IPUSA, PLLC 代理人 IPUSA, PLLC
主权项 1. A plasma processing apparatus configured to perform a plasma process on a substrate, the plasma processing apparatus comprising: a vacuum chamber; a turntable provided in the vacuum chamber and configured to rotate a substrate loading area to receive the substrate; a process gas supply part to supply a process gas to a substrate; a main antenna provided to face a passing area of the substrate and having a coiled shape configured to excite the process gas and to generate first induction coupled plasma when radio frequency power is supplied thereto; an auxiliary antenna having a coiled shape and kept electrically insulated from the main antenna at a position capable of causing electromagnetic induction with the main antenna, the auxiliary antenna being provided to include a portion that does not overlap with the main antenna when seen in a plan view and configured to excite the process gas and to generate second induction coupled plasma, wherein the auxiliary antenna is not connected to a power source; an impedance adjusting part capable of adjusting an impedance thereof and provided in a loop formed by the auxiliary antenna; and a Faraday shield that holds the main antenna and the auxiliary antenna thereon at a same level relative to the turntable and to allow a magnetic field generated by the main antenna and the auxiliary antenna to pass through the Faraday shield downward from the same level.
地址 Tokyo JP