| 摘要 |
PURPOSE:To obtain a silicon oxide film having a uniform thickness and superior characteristics by using a specified composition as an inert gas in sputtering. CONSTITUTION:A silicon oxide film is deposited on the surface of a substrate by sputtering using silicon oxide as a target and argon gas contg. 0.5-50mol% hydrogen gas as an inert gas. For example, a quartz target is used in a flat plate type high frequency magnetron sputtering apparatus. Argon gas contg. 30mol% hydrogen gas is then introduced into the apparatus, and by carrying out sputtering, a silicon oxide film is deposited on the surface of a substrate. The resulted film has superior characteristics and shows low etching speed. |
