| 摘要 |
PURPOSE:To obtain P-N junction without characteristic inferiority due to crystal distortion by providing a diffusion region having a thickness larger than a prescribed thickness and by etching the same later to give the prescribed thickness thereto by using chemical fluid when a reverse-conduction-type region is formed through diffusion on the cleaved surface of a single-conductuion-type substrate of a ternary semiconductor of lead chalcogen system. CONSTITUTION:On the side of the cleaved surface 1a of the N type substrate 1 of PbS1-XSeX cut off from a base material through cleavage is formed through diffusion a P type layer 2 having the thickness of about 25mum larger than the prescribed thickness. At this time, an alloy semiconductor composed of the same three elements of Pb, S and Se with those of the substrate 1 as a source of impurities is used, with slightly more S and Se than those in the substrate 1. Then, the layer 2 is heated to 500 deg.C in an ampul to vaporize the elements of S and Se and thereby the diffusion layer 2 is turned to be of P type. After that, the side of the layer 2 is etched by using HBr having the density of 47% and the etching is discontinued when the thickness of the layer 2 is reduced by about 10mum. Thus, the pluralistic semicondutor element having excellent characteristic is obtained by a simple method. |
