| 摘要 |
PURPOSE:To prevent the disconnection of wiring by a method wherein a stepping is reduced by burying a part of the wiring or a resistive part in the groove provided on a field insulation film. CONSTITUTION:A field oxide film 2 and a gate oxide film 3 are provided on an Si substrate 1, a groove 4 is provided on the field oxide film, a prescribed gate 6a and a wiring 6b are formed by superposing a polycrystalline Si. As there exists the gap of d=d1+d2<=2mum or thereabouts, the gap can be buried by forming an insulating film 7 in the heavier thickness than that of the larger one either of d1/2 and d2/2. A diffusion layer 8 is provided, and an Al wiring 10 is provided through the intermediary of an interlayer insulating film 9. The possibility of occurence of the disconnection of wiring can be eliminated when the stepping is reduced by burying the vicinity of the wiring cross-over section by performing the above-mentioned procedures. |
