| 摘要 |
PURPOSE:To form a high melting point metallic silicide layer on the surface of an Si film in self-alignment by a method wherein a gate insulation film and an Si film are formed on the main surface of an Si semiconductor, and etched by leaving a wiring region, and a high melting point metallic layer is formed over the entire surface. CONSTITUTION:Using a P type Si substate 11, field oxide films 12 are formed. Next, after forming a gate oxide film 13, the surface 14 of the Si substrate which should be formed as a direct contact region is exposed. Then, after forming the polycrystalline Si film, etching is performed except for the part 15 for gate wiring. Further, an Mo film 16 is formed. Thereafter, the Si 15 and the Mo 16 are mixed, and thus a drain 19 and a source 20 are formed. A heat treatment is performed in an H2 gas atmosphere, and accordingly an Mo silicide layer 17 is formed only on a polycrystalline Si layer. |
