| 摘要 |
PURPOSE:To form resistor regions in a wiring formed by a silicide forming metallic wiring material, by providing a silicide forming metal or its silicide layer on a part other than a resistor region in a silicon layer. CONSTITUTION:The first wiring layer is formed on an insulating film 2'. An insulating film 5 is formed on a lower layer part 4. Impurities are diffused in the lower layer part 4, and a lower layer part 4' is formed. An upper layer part 6 of molibdenum silicide is formed so that it is overlapped on the lower layer part 4'. Photoresist is formed on the upper layer part 6. With the photoresist as a mask, a resistor region part and a gate region part are formed. Diffused layers 9 of source and drain regions are formed. Then, a window is formed in the resistor region part and phosphorus glass 13 is deposited in the window. The insulating film in the diffused layers and the insulating film on the upper layer part 6 are removed and contact holes 12 are formed. Thereafter, a phosphorus diffused layer 14 is formed by phosphorus deposition or ion implantation. Then an aluminum wiring 15 is formed. |
