| 摘要 |
PURPOSE:To remove the leak generating between adjoining conductive patterns as well as to prevent the generation of coupling capacity by a method wherein a metal film is adhered in advance to the part located below the aperture provided by performing a lithographic method, and an insulating film is left on the inner circumference of a polycrystalline silicon by performing an anisotropic etching. CONSTITUTION:After resist 6 has been applied on a silicon oxide film 5, an aperture pattern of resist 6 is formed on a gate electrode and a source and drain. Subsequently, an aperture is formed on the film 5 by selectively performing an etching on the silicon oxide film 5 using the resist 6 as a mask. Then, after the resist 6 has been removed, a silicon oxide film 7 is formed on the upper surface of a sample by performing a decompression vapor-phase growing method. Subsequently, said silicon oxide film 7 is left on the side face only of the aperture by performing an overall etching of the equivalent component of film thickness of the silicon oxide film, and the aperture surrounded by the silicon oxide film 7 is formed in the size almost same as that of the contact hole. |
