| 摘要 |
PURPOSE:To prevent the corrosion of an Al wiring after an wafer was drawn out in the air by a method wherein the wafer formed with the aluminum wiring body according to a dry etching, wherein reaction gas of the chlorine system is used, is heated to specific temperatures, and after that, the wafer is washed with water. CONSTITUTION:A wafer formed with an aluminum wiring body according to a dry etching, wherein reaction gas of the chlorine system is used, is heated to temperatures of not less than 100 deg.C and not more than 200 deg.C, and after that, the wafer is washed with water. For example, a wafer 11 which ended the dry etching is held for one 1min-5min in a furnace, whose interior has been filled up with N2 gas and has been kept at 180 deg.C, as the wafer 11 has been put in the furnace, and following that, the wafer 11 is washed with pure water for about one minute using an ordianry spinner 12. The time to heat the wafer 11 in the furnace is continued for a period of time of exceeding a little 1min, because the heating time is somewhat short in one minute. Following that, a resist removed by an ordinary ashing technique in the following process and processes such as the formation of an insulating film, etc., are performed. As a result, the amount of chlorine remaining in the wafer is significantly reduced, thereby enabling to upgrade the yield of products and the reliability thereof. |
