| 摘要 |
PURPOSE:To enable the secure heating of small-sized wafers without generation of defects by a method wherein, using an Si wafer with a recess formed at the center as a supporting plate, a wafer to be annealed is fitted and arranged in this recess, and the temperatures are increased at the same time by photo irradiation from above and below. CONSTITUTION:Lamps 3 consisting of tubular halogen bulbs are disposed in an array in the upper and lower surfaces in a device casing 1, respectively; thus constructing a planar light source, and photo irradiation is performed from above and below. A transparent container 4 made of quartz glass is provided at the center in the casing and a supporting plate 5 is detachably arranged therein. The supporting plate is made of an Si wafer, and a circular recess 5a is formed at the center, where the wafer 6 to be annealed is fitted in and set up. Lighting the upper and lower lamps causes temperatures rise by the simultaneous heating of the supporting plate and the wafer, and the plate acts as an auxiliary heater; therefore the neighborhood of the outer periphery does not come to a lower temperature than the center, but come to a nearly equal temperature. |
