| 摘要 |
PURPOSE:To form films having uniform quality by vapor deposition on the surfaces of plural drums by ejecting a gaseous raw material from one of plate electrodes on both sides of the drum array and sucking the gas with the other plate electrode in the stage of forming the films by a plasma CVD method on the surfaces of said drums. CONSTITUTION:The plural Al drums 15 heated to a prescribed temp. are installed in a reaction chamber 21 and the plate electrodes 22, 23 are disposed on both sides of the drums 15 in parallel with the array of the drums. The electrodes 22, 23 are connected to the negative electrode of a high-frequency power source and the drums 15 are grounded 10 to provide a negative electrode with respect to the electrodes 22, 23. The gaseous raw material such as gaseous silane is ejected from many gas ejecting ports 24 provided to the electrode 22 and is passed at average density on the outside circumferences of the drums 15 over the entire surface. The gas is sucked through many gas intake ports 25 provided to the electrode 23. The silane is decomposed by the plasma discharge in this state and the amorphous Si films having uniform quality and uniform thickness are formed by vapor deposition on the surfaces of the drums 15. |
