发明名称 |
TEMPERATURE-DEPENDENT VARIABLE-CAPACITY CIRCUIT, AND HYPERFREQUENCY TEMPERATURE-DEPENDENT OSCILLATOR FREQUENCY-STABILIZED WITH THE AID OF SUCH A CIRCUIT |
摘要 |
A temperature stabilizing circuit for a microwave oscillator employing a field effect transistor on an AsGa substrate, in which a temperature-stabilized frequency is obtained by varying the gate-channel capacitance of an FET included in the oscillator resonance circuit. The capacitance is controlled by a voltage derived from a voltage divider comprising a series arrangement of several Schottky diodes or FET's. The circuit is suited to assembly as an integrated monolithic circuit comprising FETs on a AsGa substrate, for micro wave frequency applications such as for example, processing 12 GHz satellite television signals. |
申请公布号 |
DE3461975(D1) |
申请公布日期 |
1987.02.12 |
申请号 |
DE19843461975 |
申请日期 |
1984.05.25 |
申请人 |
LABORATOIRES D'ELECTRONIQUE ET DE PHYSIQUE APPLIQUEE L.E.P.;N.V. PHILIPS' GLOEILAMPENFABRIEKEN |
发明人 |
TSIRONIS, CHRISTOS |
分类号 |
H03B5/04;H03L1/02;(IPC1-7):H03H11/48 |
主分类号 |
H03B5/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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