| 摘要 |
PURPOSE:To obtain aluminum nitride single crystal excellent in quality and shape by making beta type silicon carbide a substrate layer for growth and growing aluminum nitride single crystal by a vapor growing method. CONSTITUTION:A single crystal aluminum nitride film is subjected to epitaxial growth on a beta-Sic substrate or on a beta-SiC single crystal film formed on an Si substrate by utilizing a vapor growing method. As a raw material used in the vapor growth, for example, gaseous organometallic compound such as trimethylaluminum and trietylaluminum is used. Also as the raw material of nitrogen, for example, gaseous nitrogen is used. This production is easily enabled to commercialization and also to mass production and it is significant as a technique for obtaining a surface wave device material and a wide band gap material excellent in environmental resistance. |
