| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a CF film effective as an interlayer insulation film of a semiconductor device. SOLUTION: Using a film forming gas e.g. Cn Fm gas and Ck Hs (m, n, k, s each integer) a plasma is generated by e.g. the electron cyclotron resonance to form a CF film of a specific dielectric const. of 3.0 or more, pref. 2.5 or less on a stage 3; n, m, k, s being determined according to the adhesion and hardness of this film. The CF type gas is pref. one having a double or triple bonds or CF group coupled with the four bonding arms of C. A gas contg. C, H, F e.g. CFH type gas is pref. added. |
