| 发明名称 |
Method of manufacturing a semiconductor device. |
| 摘要 |
<p>The invention relates to a method of manufacturing a semiconductor device, in which a tungsten layer is provided on a surface of a substrate by reduction of tungsten hexafluoride with hydrogen. According to the invention, the contact resistance of the tungsten with the substrate is considerably reduced by first providing a tungsten layer on the substrate by reduction of tungsten hexafluoride with silane.</p> |
| 申请公布号 |
EP0326217(A1) |
申请公布日期 |
1989.08.02 |
| 申请号 |
EP19890200133 |
申请日期 |
1989.01.24 |
| 申请人 |
N.V. PHILIPS' GLOEILAMPENFABRIEKEN |
发明人 |
SCHMITZ, JOHANNES ELISABETH JOSEF;VAN DIJK, ANTONIUS JOHANNES MARIA;ELLWANGER, RUSSELL CRAIG |
| 分类号 |
C23C16/14;H01L21/28;H01L21/285;H01L21/3205;H01L21/768;H01L23/52;H01L23/532 |
主分类号 |
C23C16/14 |
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