One transistor flash eprom cell.

摘要

An electrically programmable floating gate transistor useful as a one transistor flash EPROM cell (90) includes a multi-thickness dielectric (110) provided on a substrate (100). The multi-thickness dielectric limits tunnelling from a floating gate (114) provided on the multi-thickness dielectric to a drain (104) during programming and allowing tunnelling from the floating gate (114) to the source (108) during erasing. The floating gate (114) has a low doping concentration, less than 5x10<1><8>cm<-><3>, and a thickness of less than 1000 ANGSTROM to provide a self-limiting erase characteristic.