Bipolar transistor integrated circuit technology.

摘要

An integrated circuit bipolar transistor is described wherein the relative semiconductor electrode areas are established by an electrode pedestal that includes a base contact positioning feature and wiring constraints are relaxed by a base pedestal that facilitates the positioning of contact wiring that is independent ofcontact location. A heterojunction bipolar transistor having a base area less than twice as large as the emitter area is described. There is a substrate (1) on which is provided an n type collector region (2) surrounded by an isolation region (3). On the collector (2) there is provided a base pedestal (4) having an isolation region (5) bounding an n type region (6) and p type intrinsic base region (7) and an electrode pedestal (8) containing an n type portion of the emitter (9) and an n+ emitter contacting portion (10). Insulation région (11) supports global device interconnecting wiring (12, 13, 14) for emitter, base and collector, respectively. The two pedestal structure permits separation of the said global wiring even though the base contact (15) and the p+ extrinsic base region (16) is positioned in close physical proximity of the emitter (9). The vertical differentiation (17) provides reduced constraints informing the isolation region (3) through reduced thickness. The reduced thickness also facilitates the collector contact reach-through (18).