| 摘要 |
<p>A superconducting material made of tungsten or molybdenum containing a specified amount of silicon, a wiring (4, 4 min ) made of this superconducting material, and a semiconductor device using this wiring. The above-mentioned superconducting material undergoes no damage even in the steps of heat treatments effected after the formation of a wiring (4, 4 min ) therefrom by virtue of its high melting point, and can be very easily patterned by reactive ion etching using SF6 as an etching gas, which has heretofore been generally employed. These features, in which conventional superconducting materials are lacking, allow the superconducting material of the present invention to exhibit excellent properties particularly when used in the wirings (4, 4 min ) of a semiconductor device.</p> |
