发明名称 LARGE POWER SEMICONDUCTOR DEVICE
摘要 PURPOSE:To dispense with an externally fitted component used for detecting a current so as to obtain an overcurrent passing detection signal of a semiconductor element at a low cost by a method wherein an overcurrent detection terminal, which is connected to one of electrodes connected to regions adjacent to PN junctions which are provided to a semiconductor element fixed to a thick conductor layer, and a sealing resin layer, which is located between an electrode and the primary current path of the overcurrent detection terminal covering a thin conductor layer and components and leaving the rear of an insulating board exposed, are provided. CONSTITUTION:Copper plates 19 and 20 different from each other in thickness are fixed to a ceramic board 18. At this point, thick conductor layers 19, 20, and 21 are formed 0.5-0.3mm in thickness and a thin conductor layer 22 is formed 10-100mum in thickness. A gate electrode 24 and an emitter electrode 25 formed on the surface of a large power semiconductor element 23 mounted on the conductor layer 19 are connected to regions adjacent to PN junctions respectively. Then, lead terminals E, C, and G for the gate electrode 24 and the emitter electrode 25 are previously fixed by soldering to a sealing resin layer 28, and an overcurrent passing detection terminal A is also fixed to the sealing resin layer 28. The terminal A is formed striding over the conductor layer 2 and the conductor layer 21 which serves as a terminal point of a metal fine wire 27 that extends from the emitter electrode 25 as a starting point.
申请公布号 JPH03179767(A) 申请公布日期 1991.08.05
申请号 JP19890318153 申请日期 1989.12.07
申请人 TOSHIBA CORP 发明人 YANAGIDA SHINGO;TSUNODA TETSUJIRO
分类号 H01L25/00;H01L23/48;H01L23/62 主分类号 H01L25/00
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